Search results for "Radiation hardening"
showing 10 items of 39 documents
SiC Power Switches Evaluation for Space Applications Requirements
2016
We have evaluated several SiC power switches available on the market, by defining and performing a global test campaign oriented to Space applications requirements, in order to define their main benefits but also the limits of current SiC technology. This allowed to identify a number of target applications where SiC could be used as a technology push for a new generation of space electronics units. Silicon devices qualified for space systems above 600V for the switches and 1200V for the rectifiers are not available due to performances limitations of Si. Among the typical static and dynamic characterization, we have performed temperature and power stress and HTRB tests. More remarkably, we h…
Radiation hardness studies of CdTe and for the SIXS particle detector on-board the BepiColombo spacecraft
2009
Abstract We report of the radiation hardness measurements that were performed in the developing work of a particle detector on-board ESA's forthcoming BepiColombo spacecraft. Two different high- Z semiconductor compounds, cadmium telluride (CdTe) and mercuric iodide (HgI 2 ), were irradiated with 22 MeV protons in four steps to attain the estimated total dose of 10 12 p / cm 2 for the mission time. The performance of the detectors was studied before and after every irradiation with radioactive 55 Fe source Mn K α 5.9 keV emission line. We studied the impact of the proton beam exposure on detector leakage current, energy resolution and charge collection efficiency (CCE). Also the reconstruct…
Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization
2020
A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm2. The Rad…
Low-Power, Subthreshold Reference Circuits for the Space Environment : Evaluated with -rays, X-rays, Protons and Heavy Ions
2019
The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under &gamma
Memory irradiation measurements for the European SMART-1 spacecraft
2005
Three different types of memory circuits, that are intended to be used on board of the European satellite SMART-1, have been radiation hardness tested according to ESA's specification. Since the satellite is equipped with an electric propulsion engine, the spacecraft will be exposed to radiation during a long time when passing the radiation belt of the Earth. A standard DRAM circuit from SAMSUNG will serve as building block of the mass memory of SMART-1, and has been tested for total dose and proton induced single event upset (SEU). The DRAM memory showed surprisingly good resistance against radiation. The proton SEU cross sections for the radiation tolerant SRAM and FIFO circuits have also…
Compact instrumentation for radiation tolerance test of flash memories in space environment
2010
Aim of this work is the description of a test equipment, designed to be integrated on board of a microsatellite, able to investigate the radiation tolerance of non-volatile memory arrays in a real flight experiment. An FPGA-based design was adopted to preserve a high flexibility degree. Besides standard Program/Read/Erase functions, additional features such as failure data screening and latch-up protection have been implemented. The instrument development phase generated, as a by-product, a non-rad-hard version of the instrument that allowed performing in-situ experiments using 60Co and 10 MeV Boron irradiation facilities on Ground. Preliminary measurement results are reported to show the i…
Particle Detectors made of High Resistivity Czochralski Grown Silicon
2004
We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by µPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material.
Threshold Voltage Variability of NROM Memories After Exposure to Ionizing Radiation
2012
Threshold voltage (V-th) behavior of nitride readonly memories (NROMs) was studied after irradiation with photons (gamma-and X-rays), light and heavy ions. Both programmed and nonprogrammed single cells were investigated. The data suggest that two main physical phenomena are contributing to V-th variation and that the V-th loss and the variability can be modeled by a Weibull statistics with a shape parameter k similar to 2.2 regardless of the irradiation species and total dose. The same peculiarities were found in large memory arrays, confirming the results from single-cell studies but with significantly larger statistics. Hence, once the irradiation dose is known, the V-th loss distributio…
-ray-induced intrinsic defect processes in fluorine-doped synthetic SiO2 glasses of different fluorine concentrations
2009
Fluorine-doped synthetic SiO2 glass is suitable for investigating intrinsic defect processes in SiO2 glass because of the high radiation hardness and the low concentrations of defect precursors such as the strained Si O Si bonds and impurity-related network modifiers including SiOH, SiH, and SiCl groups. When the concentrations of the defect precursors are minimized by moderate fluorine doping into SiO2 glass, formation of oxygen vacancy–interstitial pairs (Frenkel pairs) is the primarily Co60γ-ray-induced defect process. However, heavy fluorine doping tends to degrade the radiation hardness and enhance the formation of the silicon and oxygen dangling bonds, suggesting the presence of anoth…
Assessing Radiation Hardness of SIC MOS Structures
2018
It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.